High-power III-V-on-silicon semiconductor optical amplifier (>50 mW) for integrated mode-locked lasers

Integrated semiconductor optical amplifiers (SOAs) with high output power are essential components in many future photonic applications such as LIDAR, microwave photonics and coherent optical communication [1]. Even more so in integrated mode-locked lasers, where the amplifier can severely limit the pulse energy [2]. InP/InGaAsP SOAs with high optical confinement can suffer from two-photon absorption and non-linear absorption associated with the generated carriers

26 GHz carrier frequency 10 Gbit/s radio-over-fiber link based on a directly modulated III-V/Si DFB laser

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III-V-on-silicon photonic integrated circuits for communication and sensing applications

We review the integration of III-V semiconductors on silicon photonic integrated circuits as a way of realizing fully integrated silicon photonic transceivers and short-wave infrared spectroscopic sensors